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US 2003/0205689 A1Published application
Ruthenium silicide wet etch
AssigneeMicron Technology, Inc.
InventorsBrenda D. Kraus, Michael T. Andreas
Life of this patent
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Abstract
A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed.
Claims9
An integrated circuit etching system comprising:
- a first surface comprising ruthenium silicide;
- an etchant comprising an aqueous mixture of chlorine- and fluorine-containing chemicals wherein the mixture reacts with the ruthenium silicide on the first surface to produce water-soluble reaction products.
An integrated circuit etching system, comprising:
- a first surface comprising ruthenium silicide;
- a first aqueous solution comprising a hypochlorite salt and hydrofluoric acid, wherein the aqueous solution reacts with the ruthenium silicide on the first surface to form a water-soluble reaction product;
- a second aqueous solution, wherein the second aqueous solution removes the water-soluble reaction product from the first surface.
Dependencies are inferred from the claim text.