Method for manufacturing a photovoltaic element
AssigneesTDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
InventorsTatsuji Sano, Hisao Morooka, Kazuo Nishi
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Abstract
In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked in turn on a transparent substrate. Then, an intermediate layer is provided between the second transparent conductive film and the p-type semiconductor layer so as to cover the first transparent conductive film and the second transparent conductive film.
Claims28
A photovoltaic element comprising a substrate, a transparent conductive film provided on the substrate, an intermediate layer, provided so as to cover the transparent conductive film, made in a hydrogen gas atmosphere of 15 volume % or below hydrogen concentration, a first conduction-type semiconductor layer provided on the intermediate layer, an intrinsic semiconductor layer provided on the first conduction-type semiconductor and a second conduction-type, different from the first conduction-type, semiconductor layer provided on the intrinsic semiconductor layer.
A method for manufacturing a photovoltaic element comprising the steps of:
- forming a transparent conductive film on a substrate,
- forming an intermediate layer so as to cover the transparent conductive film in a hydrogen gas atmosphere of 15 volume % or below hydrogen concentration, and
- forming, on the intermediate layer, a first conduction-type semiconductor layer, an intrinsic layer and a second conduction-type, different from the first conduction-type, semiconductor layer in turn.
Dependencies are inferred from the claim text.