Photoelectric conversion device and photo cell
AssigneeFuji Photo Film Co., Ltd.
InventorsYoshisada Nakamura, Yoshio Tadakuma, Yoshikatsu Kagawa
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Abstract
A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of irradiating semiconductor particles with electromagnetic wave or a step of heating semiconductor particles at a temperature of 50° C. or higher and lower than 350° C. under a pressure of 0.05 MPa or lower.
Claims21
A method of making a photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of activating semiconductor particles, which step includes irradiating semiconductor particles with electromagnetic wave.
A method for making a photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of heating semiconductor particles at a temperature of 50° C. or higher and lower than 350° C. under a pressure of 0.05 MPa or lower.
Dependencies are inferred from the claim text.