Method of cleaning processing chamber of semiconductor processing apparatus
AssigneeTokyo Electron Limited
InventorTakeshi Sakuma
Life of this patent
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Abstract
A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.
Claims20
A method of cleaning a processing chamber in a semiconductor processing apparatus comprising the processing chamber which is airtight and accommodates a target substrate, and a support member which supports the substrate in the processing chamber, the method comprising:
- performing a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating the support member, the halogenation treatment being so performed as to halogenate a metal element in a by-product film attaching to the support member, thereby removing the metal element from the support member;
- performing a reduction treatment after the halogenation treatment by supplying a treatment gas containing a reducing gas into the processing chamber, the reduction treatment being so performed as to reduce a metal element halide produced by the halogenation treatment and attaching to a casing wall of the processing chamber, thereby liberating a metal element;
- and
- performing an oxidation treatment after the reduction treatment by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing wall of the processing chamber, the oxidation treatment being so performed as to oxidize and thereby passivate the metal element liberated by the reduction treatment on the casing wall of the processing chamber.
A method of cleaning a processing chamber in a semiconductor processing apparatus comprising the processing chamber which is airtight and accommodates a target substrate, and a support member which supports the substrate in the processing chamber, the method comprising:
- performing a dehydration treatment which removes water present in the processing chamber;
- performing a halogenation treatment after the dehydration treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating the support member, the halogenation treatment being so performed as to halogenate a metal element in a by-product film attaching to the support member, thereby removing the metal element from the support member;
- performing a reduction treatment after the halogenation treatment by supplying a treatment gas containing a reducing gas into the processing chamber, the reduction treatment being so performed as to reduce a metal element halide produced by the halogenation treatment and attaching to a casing wall of the processing chamber, thereby liberating a metal element;
- and
- performing an oxidation treatment after the reduction treatment by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing wall of the processing chamber, the oxidation treatment being so performed as to oxidize and thereby passivate the metal element liberated by the reduction treatment on the casing wall of the processing chamber.
Dependencies are inferred from the claim text.