Method and apparatus for non-contact, in-situ temperature measurement of a substrate film during chemical vapor deposition of the substrate film

Abstract

A method and apparatus for the non-contact in-situ temperature measurement of a material layer during chemical vapor deposition of the material on an underlying substrate are provided. Magnitude modulated UV light having a plurality of separated spectral components is directed at the material being deposited on the substrate. The modulated UV light has a plurality of wavelengths corresponding to different temperature dependencies of absorptance in the deposited material. The separated spectral components are within transparency spectral windows of a plasma media contained in the CVD reactor. A portion of the magnitude modulated UV light is directed as a reference into a comparison device, such as a spectrophotometer. Light reflected from the deposited material is also directed at the comparison device for comparison with the reference light. That is, the magnitudes of the magnitude modulated components of the reflected light and the reference light are compared at more than one spectral component. The temperature of the deposited material is derived from this comparison. The results of the comparison are then utilized to control the temperature of the substrate on which the material is being deposited.

Dependencies are inferred from the claim text.