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US 2003/0203647 A1Published application
Promoting adhesion of fluoropolymer films to semiconductor substrates
AssigneeIntel Corporation
InventorLee D. Rockford
Life of this patent
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Abstract
Adhesion of high fluorine content films to semiconductor substrates may be improved by forming an intervening inherence layer. The inherence layer may be formed from a plasma gas. In one embodiment, the inherence layer may be a fluoropolymer film. In some cases, the fluoropolymer film may be used to adhere photoresist for advance photolithography processes to silicon substrates.
Claims18
A method comprising:
- forming a fluoropolymer layer from a plasma gas on a semiconductor substrate;
- and
- adhering a material containing fluorine to said substrate using said fluoropolymer layer.
A method comprising:
- using plasma polymerization and deposition to form a fluoropolymer layer on the semiconductor substrate;
- and
- adhering a material containing fluorine to said substrate using said fluoropolymer layer.
A method comprising:
- placing a semiconductor structure in a plasma chamber;
- depositing a fluoropolymer layer from a plasma gas in said chamber;
- and
- forming a fluorine containing photoresist over said fluoropolymer layer.
1 more element
Dependencies are inferred from the claim text.