US 2003/0203286 A1 · High-transmittance halftone phase shift mask and manufacturing method of semiconductor device

Abstract

The high-transmittance halftone phase shift mask is structured, in a first phase shift pattern region, with a transmission region exposing a transparent substrate and having a rectangular (square) two-dimensional shape; a phase shift region surrounding the transmissive region exposing halftone phase shift film and having a rectangular shape two-dimensional shape; and a light shielding region surrounding the phase shift region and formed of a light shielding film provided on the halftone phase shift film. With the present mask, a high-transmittance halftone phase shift mask that can transfer desired pattern clearly on the photosensitive resin and a method for producing semiconductor devices using the mask can be attained.

Claims8

Dependent claims

A high-transmittance halftone phase shift mask used for exposing a prescribed pattern on a photosensitive resin, comprising:

a light transmitting region having an aperture exposing a transparent substrate;
a phase shift region provided on said transparent substrate and exposing a halftone phase shift film having light transmittance of at least 8%;
and
a light shielding region formed by a light shielding film provided on said halftone phase shift film;
wherein
said phase shift region is provided so as to surround said light transmitting region, and said light shielding region is provided so as to surround said phase shift region to expose and transfer desired pattern defined by said aperture of said light transmitting region on said photosensitive resin.

3 more elements

Dependencies are inferred from the claim text.

High-transmittance halftone phase shift mask and manufacturing method of semiconductor device

Life of this patent

High-transmittance halftone phase shift mask and manufacturing method of semiconductor device

Life of this patent

Abstract

Claims8