Method for atomic layer deposition (ALD) of silicon oxide film

A method for forming a silicon oxide film on a substrate in a reaction chamber, comprising the steps of:

• (a) exposing a substrate having —OH groups adsorbed on the surface thereof to a first catalyst to activate hydrogen;
• (b) exposing the surface of the substrate to a first source of Si2Cl6 to perform a reaction 3, where the reaction 3 is —OH*+Si2Cl643 —O—Si2Cl5/—O—Si2Cl4+HCl;
• (c) exposing the surface of the substrate to a second catalyst to activate chlorine;
• and
• (d) exposing the surface of the substrate to a second source of H2O to perform a reaction 4, where the reaction 4 is —O—Si—Cl*+H2O→—O—Si—OH+HCl.