Single ended row select for a MRAM device
AssigneeMicron Technology, Inc.
InventorsTom W. Voshell, Mirmajid Seyyedy
Life of this patent
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Abstract
A method and apparatus for selecting a rowline in a MRAM device. A rowline select circuit is provided on a first side of each rowline and connects the rowline to ground when a memory cell in the rowline is being written to and to a voltage source when a memory cell in the rowline is being read. A rowline stack select circuit is provided on the second side of each rowline and is connected to one rowline on each plane of memory. When a memory cell is being accessed, the rowline containing that memory cell as well as each other rowline connected to the same rowline stack select circuit are connected to a current source.
Claims7
A method for forming a magnetic random access memory (MRAM) array, the method comprising:
- forming at least a first rowline of a first plane of said MRAM array;
- coupling a first side of said first rowline of said first plane to a first source/drain terminal of a transistor of a rowline select circuit of said MRAM array;
- and
- coupling a second source/drain terminal of said transistor to a current supply.
A method for forming a magnetic random access memory (MRAM) array, the method comprising:
- forming a plurality of respective first rowlines of a corresponding plurality of planes of said MRAM array;
- coupling a first side of each of said respective first rowlines to a first source/drain terminal of a transistor of a rowline select circuit;
- coupling a second source drain terminal of said transistor to a current supply;
- switchably coupling a second side of each of said respective first rowlines to a respective plurality of voltage terminals;
- and
- switchably coupling said second side of each of said respective first rowlines to a respective plurality of ground terminals.
A method for reading a memory cell of a magnetic random access memory (MRAM) array, the method comprising:
- selecting a rowline of said MRAM array associated with said memory cell;
- connecting a first side of said selected rowline to a voltage supply;
- and
- connecting a second side of a plurality of rowlines in a stack of rowlines residing in different planes of said MRAM array, including said selected rowline, to a current supply.
A method for writing to a memory cell of a magnetic random access memory (MRAM) array, the method comprising:
- selecting a rowline of said MRAM array associated with said memory cell;
- connecting a first side of said selected rowline to ground;
- and
- connecting a second side of a plurality of rowlines in a stack of rowlines residing in different planes of said MRAM array, including said selected rowline, to a current supply.
Dependencies are inferred from the claim text.