High frequency power amplifier module
AssigneeRenesas Technology Corp.
InventorsMasami Ohnishi, Hitoshi Akamine
Life of this patent
Estimating the term…
Loading patent…
AssigneeRenesas Technology Corp.
InventorsMasami Ohnishi, Hitoshi Akamine
Estimating the term…
The present invention provides a power amplifier module used in a cellular phone or the like. In the power amplifier module, a bias control circuit converts a bias voltage to a current by MOS transistors, whereby a voltage drop is reduced and the value of the bias voltage is lowered. Bias control signals outputted from the bias control circuit are inputted to a high-frequency amplifying unit through low-pass filters. The low-pass filter comprises an inductance, and a condenser. Each of the condensers attenuates an envelope frequency. Each of the inductances suppresses a change in impedance at a carrier frequency of a modulation signal.
A high frequency power amplifier module, comprising:
Dependencies are inferred from the claim text.