Method for fabricating metal electrode with atomic layer deposition (ALD) in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorYounsoo Kim
Life of this patent
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Abstract
A method for fabricating a semiconductor memory device, includes the steps of loading a substrate into a reaction chamber for an atomic layer deposition, injecting an precursor consisting of M and X into the reaction chamber and including an adsorption precursor onto a surface of the substrate, wherein M is one of nickel (Ni), palladium (Pd) and platinum (Pt) and X is ligand, purging the reaction chamber, injecting a reaction gas into the reaction chamber and forming a metal layer by reacting the precursor adsorbed on the surface of the substrate with the, reaction gas and purging the reaction chamber.
Claims14
A method for fabricating a semiconductor memory device, comprising the steps of:
- loading a substrate into a reaction chamber for an atomic layer deposition;
- injecting an precursor consisting of M and X into the reaction chamber and including an adsorption precursor onto a surface of the substrate, wherein M is one of nickel (Ni), palladium (Pd) and platinum (Pt) and X is ligand;
- purging the reaction chamber;
- injecting a reaction gas into the reaction chamber and forming a metal layer by reacting the precursor adsorbed on the surface of the substrate with the reaction gas;
- and
- purging the reaction chamber.
A semiconductor memory device comprising:
- a substrate:
- and
- a metal layer formed on the substrate by using an atomic layer deposition, wherein the metal layer is formed by reacting a precursor consisting of M and X with a reaction gas on a surface of the substrate, wherein M is one of nickel (Ni), palladium (Pd) and platinum (pt), and X is ligand.
Dependencies are inferred from the claim text.