Semiconductor power conversion apparatus
AssigneeHitachi, Ltd.
InventorsShuji Katoh, Shigeta Ueda, Hiromitsu Sakai, Takashi Ikimi, Tomomichi Ito
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Abstract
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
Claims16
A semiconductor power conversion apparatus comprising:
- a circuit for dividing a collector voltage of an insulated gate bipolar transistor;
- and
- means for controlling a potential of a gate of said IGBT to a potential of a voltage dividing point divided by said circuit, to protect said insulated gate bipolar transistor against an overvoltage applied to a collector of said insulated gate bipolar transistor, wherein
- a potential of a case of a resistor on a high-voltage side of said voltage dividing point is fixed to an emitter potential of said insulated gate bipolar transistor.
An insulated gate bipolar transistor overvoltage protection apparatus comprising:
- a circuit for dividing a collector voltage of an insulated gate bipolar transistor;
- and
- means for controlling a potential of a gate of said insulated gate bipolar transistor to a potential of a voltage dividing point divided by said circuit, to protect said insulated gate bipolar transistor against an overvoltage applied to a collector of said insulated gate bipolar transistor, wherein
- a potential of a case of a resistor on a high-voltage side of the voltage dividing point is fixed to an emitter potential of said insulated gate bipolar transistor.
A semiconductor power conversion apparatus comprising:
- a circuit for diving a collector voltage of a metal-oxide-semiconductor gate device;
- and
- means for controlling a potential of a gate of said metal-oxide-semiconductor gate device to a potential of a voltage dividing point divided by said circuit, to protect said metal-oxide-semiconductor gate device against an overvoltage applied to a collector of said metal-oxide-semiconductor gate device, wherein
- a potential of a case of a resistor on a high-voltage side of said voltage dividing point is fixed to an emitter potential of said metal-oxide-semiconductor gate device.
Dependencies are inferred from the claim text.