Semiconductor device having an improved local interconnect structure and a method for forming such a device

A semiconductor device, comprising:

• a substrate having a semiconductor layer provided thereon, the semiconductor layer including an active region and an insulating region;
• a first semiconductor containing line having sidewalls and an upper surface, the first semiconductor containing line located above said insulating region;
• a second semiconductor containing line having sidewalls and an upper surface, the second semiconductor containing line being located on said insulating region, spaced apart from the first semiconductor containing line, the first and second semiconductor containing lines each including a dielectric layer formed on the respective sidewalls of the first and second semiconductor containing lines;
• and
• a conductive layer formed adjacent to said dielectric layer and on respective portions of said upper surfaces of the first and second semiconductor containing lines, wherein the conductive layer further includes an interconnect extension portion formed on said insulating region and connecting said first and second semiconductor containing lines.

A field effect transistor, comprising:

• a drain and a source region formed in an active region;
• a gate electrode formed over the active region and separated therefrom by a gate insulation layer, the gate electrode having sidewalls and an upper surface;
• and
• spacer elements formed adjacent to the sidewalls, said spacer elements comprising a dielectric layer and a metal containing layer, the dielectric layer insulating the metal containing layer from said active region.

A method of forming a local interconnect, comprising:

• providing a substrate having formed thereabove a semiconductor containing line;
• depositing a first dielectric layer over the substrate;
• patterning the first dielectric layer to expose a contact area on the semiconductor containing line;
• depositing a conductive layer over the substrate;
• depositing a second dielectric layer on the conductive layer;
• forming a mask layer to cover a portion of said contact area;
• and
• anisotropically etching regions not covered by said mask layer to form a conductive sidewall spacer on the sidewalls of said semiconductor containing line and a local interconnect in said contact area.

A method of forming a local interconnect in a semiconductor device, the method comprising:

• providing a substrate having formed thereabove a semiconductor containing line;
• forming a first dielectric layer over the substrate;
• patterning the first dielectric layer to expose at least a portion of said first dielectric layer formed on the semiconductor containing line;
• depositing a conductive layer over the substrate;
• forming a mask layer over the substrate so as to cover a portion of said contact area;
• anisotropically etching said conductive layer to form a first sidewall spacer on sidewalls of said semiconductor containing line;
• performing an ion implantation to define source and drain extension areas adjacent to the semiconductor containing line, wherein the first sidewall spacers serve as an implantation mask;
• depositing a second dielectric layer over the substrate;
• and
• anisotropically etching the second dielectric layer to form second sidewall spacers, wherein the portion of said conductive layer formed in said contact area serves as the local interconnect.

A method of forming a local interconnect in a semiconductor device, the method comprising:

• providing a substrate having formed thereabove a semiconductor containing line;
• forming first dielectric sidewall spacers at the sidewalls of the semiconductor containing line;
• depositing a first dielectric layer;
• patterning the first dielectric layer to expose a contact area on said semiconductor containing line;
• depositing a conductive layer;
• forming a mask layer to cover a portion of said contact area;
• and
• forming conductive sidewall spacers and said local interconnect by anisotropically etching said conductive layer.