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AssigneeInternational Business Machines Corporation
InventorsDureseti Chidambarrao, Rajarao Jammy, Jack A. Mandelman
Estimating the term…
A Deep Trench (DT) capacitor in a semiconductor substrate has an isolation collar formed on trench sidewalls above the DT bottom. An outer plate is formed below the collar. Capacitor dielectric is formed on DT walls below the collar. An node electrode is formed in the DT, recessed below the DT top. The collar is recessed in the DT. A combined poly/counter-recrystallizing species cap is formed over the node electrode with a peripheral strap. The cap may be formed after formed a peripheral divot of a recessed collar, followed by forming an intrinsic poly strap in the divot and doping with a counter-recrystallization species, e.g. Ge, into the node electrode and the strap. Alternatively, the node electrode is recessed followed by codeposition of poly and Ge or another counter-recrystallization species to form the cap and strap.
In a method of forming a trench capacitor in a semiconductor substrate having a top surface, a collar for isolation formed on the sidewalls of the trench, an outer capacitor plate formed in the substrate below the collar, a node dielectric formed on the walls of the trench below the collar, and an node electrode formed in the trench over the node dielectric, including the steps comprising:
In a method of forming a trench capacitor in a semiconductor substrate having a top surface, with a cap doped with a counter-recrystallizing species formed on the top of the capacitor node electrode, a trench in a doped semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench with a collar bottom substantially above the bottom of the trench, an outer plate of the capacitor formed in the substrate at the bottom of the trench below the collar, a node dielectric of the capacitor comprising a layer formed on the walls of the trench below the collar, an inner, storage node electrode of the capacitor formed in the trench, recessed below the top of the trench with the inner, storage node electrode having an inner, storage node electrode top surface, including the steps comprising:
In a method of forming a trench capacitor in a semiconductor substrate having a top surface, a trench in a doped semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench substantially above the bottom thereof, an node electrode of the trench capacitor formed in the substrate at the bottom of the trench below the collar, a dielectric layer of the trench capacitor comprising a thin film formed on the walls of the trench below the collar, an node electrode of the trench capacitor formed in the trench recessed below the top of the trench having a node electrode top with an node electrode top surface, and the collar having been etched back below the node electrode top surface thereby forming a divot recessed about the edge of the of the node electrode top surface the processing step including forming a combination of silicon and a counter-recrystallizing species in at least one of the group consisting of the node electrode top surface and the buried strap.
A method of forming a trench capacitor in a semiconductor substrate having a top surface, a trench in a doped semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench substantially above the bottom thereof, an outer plate of the trench capacitor formed in the substrate at the bottom of the trench below the collar, a dielectric layer of the trench capacitor formed on the walls of the trench below the collar, an node electrode of the trench capacitor formed in the trench recessed below the top of the trench, the node electrode having an node electrode top surface, including by the following steps:
A trench capacitor in a semiconductor substrate having a top surface,
A trench capacitor formed in a substrate formed of a doped semi-conductor having a top surface, with a cap doped with a counter-recrystallizing species formed on the top of the capacitor node electrode, a trench formed in the semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench with a collar bottom substantially above the bottom of the trench, an outer plate of the capacitor formed in the substrate at the bottom of the trench below the collar, a node dielectric of the capacitor comprising a layer formed on the walls of the trench below the collar, an inner, storage node electrode of the capacitor formed in the trench, recessed below the top of the trench with the inner, storage node electrode having an inner, storage node electrode top surface, comprising:
A trench capacitor in a semiconductor substrate having a top surface, a trench in a doped semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench substantially above the bottom thereof, an node electrode of the trench capacitor formed in the substrate at the bottom of the trench below the collar, a dielectric layer of the trench capacitor comprising a thin film formed on the walls of the trench below the collar, an node electrode of the trench capacitor formed in the trench recessed below the top of the trench having a node electrode top with a top surface, and the collar having been recessed below the node electrode top surface thereby formed a divot recessed about the edge of the of the node electrode top surface, including a combination of silicon and a counter-recrystallizing species formed in at least one of the group consisting of the node electrode top surface and the buried strap.
A trench capacitor formed in a semiconductor substrate having a top surface, a trench in a doped semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench substantially above the bottom thereof, an outer plate of the trench capacitor formed in the substrate at the bottom of the trench below the collar, a dielectric layer of the trench capacitor formed on the walls of the trench below the collar, an node electrode of the trench capacitor formed in the trench recessed below the top of the trench, the node electrode having an node electrode top surface, including:
A trench capacitor formed in a semiconductor substrate having a top surface, a trench in a doped semiconductor substrate having a bottom, sidewalls and a top extending through the top surface of the substrate, a collar for isolation formed on the sidewalls of the trench substantially above the bottom thereof, an outer plate of the trench capacitor formed in the substrate at the bottom of the trench below the collar, a dielectric layer of the trench capacitor formed on the walls of the trench below the collar, a doped polysilicon node electrode of the trench capacitor formed in the trench recessed below the top of the trench, the node electrode having an node electrode top surface, including:
Dependencies are inferred from the claim text.