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US 2003/0201460 A1Published application
Semiconductor layer
AssigneeRF Micro Devices, Inc.
InventorsMatthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
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Abstract
The present invention provides a highly doped semiconductor layer.
Claims33
A semiconductor layer comprising:
- a first impurity, said first impurity having a first degradation concentration;
- and
- a second impurity, said second impurity having a second degradation concentration,
- whereby each of said first impurity and second impurity are introduced in the semiconductor layer at concentrations below the respective first and second degradation concentrations.
1 more element
A semiconductor layer comprising:
- two or more epitaxially grown impurities of the same carrier type.
A semiconductor layer comprising:
- a first dopant, having a concentration below a degradation concentration;
- and
- a second dopant, having a concentration below the degradation concentration, wherein the semiconductor layer has a total dopant concentration of at least approximately 3×1019 cm−3.
A method for forming a semiconductor crystal layer comprising:
- a. introducing a first impurity during formation of the crystal layer;
- b. introducing at least a second impurity during formation of the crystal layer.
Dependencies are inferred from the claim text.