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US 2003/0201437 A1Published application
Semiconductor display devices and applications
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
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Abstract
A semiconductor device having CMOS circuits formed on a glass substrate. The CMOS circuits are composed of TFTs. Lightly doped regions are formed only in the N-channel TFTs. When P-channel TFTs are formed, the conductivity type of the lightly doped regions is converted by a boron ion implant. Each CMOS circuit consists of an N-channel TFT having the lightly doped regions and a P-channel TFT having no lightly doped regions.
Claims1
An electro-optical device comprising:
- a substrate;
- a P-channel thin-film transistor comprising a first source region and a first drain region, and a first channel region located between said first source region and said first drain region, wherein said first source region and sand first drain region include portions of a P-type conductivity adjacent to said first channel region that are more lightly doped with an N-type dopant than other portions of said first source region and said first drain region;
- and
- an N-channel thin-film transistor provided over said substrate adjacent to said P-channel thin-film transistor and comprising a second source region and a second drain region, a second channel region provided between said second source region and said second drain region, and an N-region located between said second channel region and at least one of said second source region and second drain region,
- wherein said electro-optical device is a TV camera, a personal computer, a car navigation system, a video camera or a portable intelligent terminal.
2 more elements
Dependencies are inferred from the claim text.