Rotating semiconductor processing apparatus
AssigneeASM America, Inc.
InventorDennis L. Goodwin
Life of this patent
Estimating the term…
Abstract
A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.
Claims31
A processing apparatus, comprising:
- a reaction chamber having upper and lower walls;
- a wafer support structure positioned inside the chamber to support a wafer;
- a first array of heating elements located outside of the reaction chamber;
- a reflector located outside the reaction chamber and positioned to reflect radiant heat toward the support structure;
- and
- a rotatable showerhead positioned above the wafer support structure having apertures through which reactant gases pass to deposit onto the wafer.
A semiconductor processing apparatus, comprising:
- a processing chamber;
- a support structure for supporting a wafer within the processing chamber;
- a plurality of heating elements disposed around the chamber to heat the wafer within the chamber;
- and
- at least one rotatable reflector positioned to reflect heat generated by the heating elements toward the support structure, said reflector being rotatable relative to the plurality of heating elements and the support structure;
- wherein the processing chamber is adapted to rotate about the support structure.
A semiconductor processing apparatus, comprising:
- a processing chamber;
- a support structure for supporting a wafer within the processing chamber;
- and
- at least one heating element positioned outside of the chamber;
- at least one reflector located outside the chamber and positioned to direct heat from the heating element to the wafer within the processing chamber;
- wherein the processing chamber is adapted to rotate about a common axis and at a different rate compared to the support structure.
Dependencies are inferred from the claim text.