Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorHirofumi Moriyama
Life of this patent
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Abstract
A humidifying heat treating unit for heating a wafer W having a coated film such as a dielectric film formed thereon under a humidified atmosphere comprises a hot plate for heating the wafer W, a chamber having a plurality of blocks, and provided with a gas supply port for supplying a humidified gas into the chamber and an exhaust port exhausting the chamber for every block, and a control section for controlling the supply-exhaust of the humidified gas into and out of the chamber. The control section controls the supply-exhaust of the humidified gas for every block.
Claims25
A substrate processing apparatus, comprising:
- holding means for holding a substrate substantially horizontal;
- a chamber for applying a prescribed processing to the substrate held by said holding means;
- a gas supply port formed through the upper wall of said chamber;
- gas supply means for supplying a gas containing a prescribed vapor into said chamber through said gas supply port;
- a diffusion plate arranged above the substrate held by said holding means within said chamber and having a plurality of gas spurting ports arranged at prescribed positions so as to permit the gas supplied into said chamber through said gas supply port to be supplied substantially uniformly onto the surface of said substrate;
- and
- exhaust means for exhausting the gas supplied into said chamber to the outside through a bottom portion of said chamber.
A substrate processing apparatus, comprising:
- holding means for holding a substrate substantially horizontal;
- a chamber for applying a prescribed processing to the substrate held by said holding means and having a plurality of blocks;
- a gas supply port and a gas exhaust port arranged in said chamber for every block;
- gas supply means for supplying a gas containing a prescribed vapor into said chamber through said gas supply port;
- gas exhausting means for exhausting said chamber through said gas exhaust port;
- and
- a gas supply-exhaust control mechanism for optionally controlling for every block the gas supply into said chamber through said gas supply port and the exhaust of said chamber through said gas exhaust port.
A substrate processing method for applying a prescribed processing to a substrate held under a prescribed gaseous atmosphere, comprising:
- the step of housing a substrate in a chamber having a plurality of blocks and provided with a gas supply port and a gas exhaust port mounted for every block;
- and
- the step of processing a substrate by optionally carrying out for every block a gas supply processing for supplying a gas containing a prescribed vapor into said chamber through said gas supply port and an exhaust processing within said chamber through said gas exhaust port.
Dependencies are inferred from the claim text.