Method for reducing the resistivity of p-type II-VI and III-V semiconductors
AssigneeKopin Corporation
InventorsPeter Rice, Schang-Jing Hon, Alexander Wang, Kevin O'Connor
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Abstract
The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.
Claims19
A method of reducing the resistivity of a p-doped III-V semiconductor material or a p-doped II-VI semiconductor material, comprising the step of placing the semiconductor material in an electric field, whereby the electrical resistivity of the material is reduced.
A method of manufacturing a p-type III-V or p-type II-VI semiconductor material, comprising the steps of:
- a) growing the semiconductor material using a reaction gas comprising a p-type impurity source, wherein the semiconductor material is a III-V or II-VI semiconductor material;
- and
- b) applying an electric field to the semiconductor material, thereby reducing the resistivity of the semiconductor material and forming a p-type III-V or p-type II-VI semiconductor material.
Dependencies are inferred from the claim text.