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US 2003/0199164 A1Published application
Method of etching back of semiconductor wafer
AssigneeOki Electric Industry Co., Ltd.
InventorsAkira Uchiyama, Yutaka Kamata
Life of this patent
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Abstract
A resist pattern is formed at an outermost peripheral end of the surface of a wafer. Thereafter, the back of the wafer is back-etched using chemicals to thin the wafer. A passivation film is left behind only at scribe lines for separating semiconductor chips located at the outermost peripheral end of the wafer surface and thereafter the wafer is back-etched.
Claims13
A method of etching the back of a semiconductor wafer, comprising the following steps:
- a step for forming an etching-resistant film having resistance to an etchant for etching the back of the semiconductor wafer, on the surface of the semiconductor wafer;
- a step for patterning the etching-resistant film and leaving the etching-resistant film at an outermost periphery of the semiconductor wafer;
- and
- a step for etching the back of the semiconductor wafer with the etchant.
1 more element
A method of etching the back of a semiconductor wafer, comprising the following steps:
- a step for forming an etching-resistant film having resistance to an etchant for etching the back of the semiconductor wafer, on the surface of the semiconductor wafer;
- a step for leaving the etching-resistant film only at scribe lines located on an outermost periphery of the surface of the semiconductor wafer;
- and
- a step for etching the back of the semiconductor wafer with the etchant.
1 more element
Dependencies are inferred from the claim text.