Method of fabricating a shallow trench isolation structure
AssigneeNanya Technology Corporation
InventorsTzu-En Ho, Chang Rong Wu, Yi-Nan Chen
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Abstract
A method for fabricating STI for semiconductor device. The method includes the following steps. A trench is formed on the semiconductor substrate, a liner oxide is formed on the bottom and sidewall of the trench, and then a liner nitride is formed on the liner oxide. The first oxide layer is deposited in the trench by high density plasma chemical vapor deposition. The first oxide layer is spray-etched to a predetermined depth, wherein the recipe of the spray etching solution is HF/H2SO4=0.3˜0.4. A second oxide layer is deposited to fill the trench by high density plasma chemical vapor deposition to form a shallow trench isolation structure.
Claims19
A method of fabricating a shallow trench isolation structure in a semiconductor substrate, comprising steps of:
- forming a trench on the semiconductor substrate;
- forming a liner oxide on the bottom and sidewall of the trench;
- forming a liner nitride on the liner oxide;
- depositing a first oxide layer in the trench by high density plasma chemical vapor deposition;
- spray etching the first oxide layer to a predetermined depth, wherein the recipe of the spray etching solution is HF/H2SO4=0.3˜0.4;
- and
- depositing a second oxide layer to fill the trench by high density plasma chemical vapor deposition.
A method of fabricating a shallow trench isolation structure in a semiconductor substrate, comprising steps of:
- forming a trench on the semiconductor substrate, wherein the trench has an aspect ratio greater than 3;
- forming a liner oxide on the bottom and sidewall of the trench by thermal oxidation;
- forming a liner nitride on the liner oxide by low pressure CVD;
- depositing a first oxide layer in the trench by high density plasma chemical vapor deposition;
- spray etching the first oxide layer to a predetermined depth, wherein the recipe of the spray etching solution is HF/H2SO4=0.3˜0.4;
- depositing a second oxide layer to fill the trench by high density plasma chemical vapor deposition;
- and
- performing chemical-mechanical polishing to planarize the surface of the second oxide layer.
Dependencies are inferred from the claim text.