US 2003/0199143 A1 · Method for fabricating non-volatile memory having P-type floating gate

Abstract

A method for fabricating a non-volatile memory having a P-type floating gate is described. A tunneling layer is formed on a substrate and then a first patterned polysilicon layer is formed on the tunneling layer. A buried drain is formed in the substrate beside the first polysilicon layer and then an insulating structure is formed on the tunneling layer on the buried drain. Thereafter, a second polysilicon layer is formed on the first polysilicon layer to constitute a floating gate together with the first polysilicon layer. A P-type ion is implanted into the second polysilicon layer and then a dielectric layer and a control gate are sequentially formed on the floating gate. A thermal process is then performed to make the P-type, ion in the second polysilicon layer diffuse into the first polysilicon layer.

Claims20

Dependent claims

A method for fabricating a non-volatile memory having a P-type floating gate, comprising the steps of:

forming a tunneling layer on a substrate;
forming a first patterned conductive layer on the tunneling layer;
forming a buried drain in the substrate beside the first conductive layer;
forming an insulating structure on the buried drain;
forming a second patterned conductive layer on the first conductive layer to constitute a floating gate together with the first conductive layer;
performing a P-type implantation to dope the second conductive layer with a P-type ion;
forming a dielectric layer on the second conductive layer and the insulating structure;
and
forming a control gate on the dielectric layer.

6 more elements

Dependencies are inferred from the claim text.

Method for fabricating non-volatile memory having P-type floating gate

Life of this patent

Method for fabricating non-volatile memory having P-type floating gate

Life of this patent

Abstract

Claims20