Method of forming inter-metal dielectric
AssigneeNanya Technology Corporation
InventorsHui Min Mao, Yi-Nan Chen, Tzu-Ching Tsai
Life of this patent
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Abstract
A method of forming inter-metal dielectric (IMD). A substrate having a patterned metal layer thereon has at least one opening to expose the substrate. The aspect ratio of the opening is 3.5˜4.5. Next, the opening is filled with a first dielectric layer, and voids are formed in the upper portion of the first dielectric layer due to the high aspect ratio opening. Thereafter, the first dielectric layer is etched to leave the first dielectric layer with a predetermined height in the opening without voids. Finally, a second dielectric layer is formed on the first dielectric layer to completely fill the opening.
Claims20
A method of forming inter-metal dielectric, comprising the steps of:
- providing a substrate having a patterned metal layer with at least one opening to expose the substrate;
- filling the opening with a first dielectric layer;
- etching back the first dielectric layer to leave the first dielectric layer with a predetermined height in the opening;
- and
- forming a second dielectric layer on the first dielectric layer to completely fill the opening.
A method of forming inter-metal dielectric, comprising the steps of:
- providing a substrate covered by a first dielectric layer;
- forming an aluminum pattern on the first dielectric layer, the patterned metal layer having at least one opening to expose the first dielectric layer, and the aspect ratio of the opening is 3.5˜4.5;
- forming a conformable protective layer over the aluminum pattern and the opening;
- filling the opening with a second dielectric layer;
- etching back the second dielectric layer to leave the second dielectric layer with a predetermined height in the opening;
- and
- forming a third dielectric layer on the second dielectric layer to completely fill the opening.
Dependencies are inferred from the claim text.