Wafer-level test structure for edge-emitting semiconductor lasers
AssigneeIntel Corporation
InventorAndrew J. Kuzma
Life of this patent
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Abstract
Wafer-level stage testing of semiconductor lasers can be facilitated by directing a light beam emitted from the semiconductor laser toward a direction different from a path of the light beam as originally emitted from the laser. A test structure can be coupled to a back facet of the laser and can include a first region separated from a second region by an inclined interface. When a light beam is emitted from the laser, the light beam can be received on the inclined interface and then directed toward a light detector for detection and evaluation.
Claims29
A method, comprising:
- optically coupling a test structure to a device on a wafer, the test structure included on the wafer, the test structure comprising a first region, a second region, and an interface defined between the first and second regions, the second region comprising a material different from a material of the first region, wherein the test structure is optically coupled to the device in a manner to allow the interface to direct a light beam emitted from the device in a direction different from an original direction of the emitted light beam;
- and
- detecting the light beam directed from the interface.
An article of manufacture, comprising:
- at least one light emitting device located on a semiconductor wafer, the light emitting device having a first end and a second end;
- a test structure included on the wafer, the test structure optically coupled to the light emitting device at the second end of the light emitting device;
- and
- a generally inclined interface defined by a first material and a second material of the test structure, the inclined interface to direct a light signal received from the light emitting device towards a direction different from an original path of the light signal from that light emitting device.
An article of manufacture, comprising:
- a plurality of light emitting devices located on a semiconductor wafer;
- and
- a structure included on the wafer, the structure structured to direct light received from the light emitting devices toward a direction different from an original direction of the light as emitted from the light emitting devices.
A process, comprising:
- forming a semiconductor device on a wafer;
- and
- forming a test structure on the wafer, the test structure optically coupled to an end of the semiconductor device, comprising:
- depositing a photoresist material on a first region adjacent to the semiconductor device;
- selectively removing portions of the photoresist material to form inclined sections separated by openings to expose the first region;
- and
- selectively etching the first region through the openings to remove portions of the first region to form an incline on the first region based on the incline of the sections and to form a second region.
A test structure, comprising:
- an inclined interface capable to direct light;
- a first region below the inclined interface;
- and
- a second region above the inclined interface,
- wherein the first region is capable to be optically coupled to a light emitting device to allow the inclined interface to direct light received from the light emitting device toward a direction different from an original direction of the received light.
A method, comprising:
- directing a light beam emitted from a device in a wafer in a direction different from an original direction of the light beam as emitted from the device, via use of a test structure included on the wafer;
- detecting the directed light beam;
- and
- evaluating the detected light beam.
Dependencies are inferred from the claim text.