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US 2003/0198898 A1Published application
Method for manufacturing a semiconductor device
AssigneeNone recorded
InventorsShun-Li Lin, Chun-Yi Yang
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AssigneeNone recorded
InventorsShun-Li Lin, Chun-Yi Yang
Estimating the term…
A method for fabricating a MOSFET structure having a source/drain extension and a source/drain region is disclosed, in which a basic antireflection coating is formed over a semiconductor substrate. A photoresist layer is formed over the basic antireflection coating. The photoresist layer is exposed to a radiation for transferring a pattern on the photoresist layer and the exposed photoresist layer is developed to form an opening over the areas for forming the source/drain regions, as a result a photoresist pattern with footing structures at a bottom comer of the photoresist pattern is formed. An ion implantation using the photoresist pattern as a mask, to simultaneously to form a source/drain extension and a source/drain region.
A method for manufacturing a semiconductor device having a source/drain extension and a source/drain region, the method comprising the steps of:
A method of forming a photoresist pattern, the method comprising the steps of:
A method of manufacturing a mask read-only-memory device, the method comprising the steps of:
Dependencies are inferred from the claim text.
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Having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped…
Into semiconductor materials, e.g. for doping: using masks
Photolithographic processes: using an anti-reflective coating
Inorganic electric semiconductor devices
Term end not estimated
1. Filed of Invention
The present invention relates to a method for manufacturing a semiconductor device. More particularly, the present invention relates to a method of forming a source/drain extension in the fabrication of a MOS field effect transistor (MOSFET).
2. Description of Related Art
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings,
FIGS. 1 through 4 is a schematic cross sectional view, showing the progression of manufacturing process for forming a MOSFET structure according to a preferred embodiment of the present invention.
The present invention is directed to a method for fabricating a source/drain extension in a MOSFET structure. Referring to FIG. 1, according to a preferred embodiment of the present invention, a semiconductor substrate 100 is provided. An anti-reflection coating (ARC) 102 is formed over the semiconductor substrate 100. The function of ARC 102 is to prevent light reflection from the substrate during the photolithography process. The ARC 102 is important for forming a fine dimension pattern, as is well known to persons skilled in the art. The ARC 102 can be a bottom antireflection coating (BARC), or alternatively, the ARC 102 can be a dielectric antireflection coating (DARC).
Known examples of BARC are an inorganic coating type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon and α-silicon, and an organic coating type comprising a light absorbent and a polymer material. The advantage of using an organic BARC is that both the photoresist layer and the BARC can be effectively removed by using for example, a conventional plasma ashing process.
Known example of DARC is a SiON DARC. The SiON DARC can be formed by a number of conventional techniques, including deposition of SiON in an ambient containing O2, NO, N2O, NH3, He, N2, or Ar.