Method of fabricating patterns with a dual damascene process

#1. Field of the Invention

#The present invention relates to a dual damascene process. It is particularly related to a method of fabricating a pattern of a via and an interconnective trench with a via-first method, namely by first forming the via so as to connect upper and lower layers with interconnect.

#2. Description of the Prior Art

#FIG. 1A through FIG. 1D depict cross-sections illustrating a conventional example of a pattern formation process in order of steps thereof;

#FIG. 2A through FIG. 2C depict cross sections continuing after FIG. 1D to illustrate the conventional example of the pattern formation process in order of steps thereof;

#FIG. 3 depicts a top view of a dual damascene structure of a first embodiment of the present invention;

#Hereinafter, several embodiments of a pattern formation method of the dual damascene process of the present invention will be given and described in detail with reference to the drawings.

#FIG. 3 depicts a top view of a dual damascene pattern formed according to the first embodiment of the pattern formation method of the present invention. As illustrated in FIG. 3, a lower layer interconnect 12 of a dual damascene, which applies the first embodiment of the pattern formation method of the present invention, is formed into a predetermined pattern, and upon an interlayer insulating film 17 that covers this lower layer interconnect 12, a trench interconnect, which has a predetermined pattern partially crossing the lower layer interconnect 12, is formed as an upper interconnect 25.

#At the crossing portions of the dual damascene, a via 24 is then extended downwards from the upper interconnect 25, and upon contact with the lower layer interconnect 12, the lower layer interconnect 12 and upper interconnect 25 are electrically connected through the via.