Wave guided alternating phase shift mask and fabrication method thereof

#This application claims priority under 35 U.S.C. § 119 from Korean Patent Application No. 2002-21681, filed on Apr. 19, 2002, the contents of which are hereby incorporated by reference as their entirety as if fully set forth herein.

#1. Technical Field

#The present invention relates to an alternating phase shift mask (PSM) used for fabricating semiconductor devices and a fabricating method of the same, and more particularly, to a wave guided alternating phase shift mask (WGAPSM) and a fabricating method of the same.

#The above objectives and advantages of the present invention will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which:

#FIG. 1 is a sectional view of an alternating phase shift mask (PSM);

#FIG. 2 is a graph of a substantial distribution of intensity of beams when the alternating PSM of FIG. 1 is used;

#The present invention will now be described more fully with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and compete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and the size of transparent regions and patterns are exaggerated for clarity. The same reference numerals in different drawings represent the same elements.

#FIG. 6 is a partial perspective view of a wave guided alternating phase shift mask (WGAPSM) having a waveguide pattern 104 for defining a transparent region. FIG. 7 is a sectional view of the mask of FIG. 6, taken along the cutting plane line VII-VII′, and FIG. 8 is a partial enlarged view of the mask of FIG. 7.

#Referring to FIGS. 6 through 8, the waveguide pattern 104 is formed on a substrate 102 that is transparent to light from an exposure light source to define a plurality of transparent regions A and B that are regularly arranged. Here, the transparent regions B which are shift regions are formed of recess regions 108, and transparent regions A which are non-shift regions are alternatively arranged with the shift transparent regions B.