Flexible circuit substrate
AssigneeNone recorded
InventorsTang-Chieh Huang, Chau-Chin Chuang
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AssigneeNone recorded
InventorsTang-Chieh Huang, Chau-Chin Chuang
Estimating the term…
A flexible circuit substrate includes a laminate which contains a polymer film, a VIB group metal layer sputtered on the polymer film, a nickel-chromium alloy layer sputtered on the VIB group metal layer, and a copper layer formed on the nickel-chromium alloy layer. The VIB group metal layer is selected from the group consisting of chromium, molybdenum, and tungsten. The VIB group metal layer is free of metal oxide. The VIB group metal layer and the nickel-chromium alloy layer are formed by a sputtering process using an oxygen-free inert atmosphere containing argon.
A flexible circuit substrate, comprising a laminate which includes:
Dependencies are inferred from the claim text.
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Improvement of the adhesion between the insulating substrate and the metal: by the use of a metallic or inorganic thin film adhesion layer
Organic component: synthetic resin
Printed circuits
Technical subjects covered by former us classification
Term end not estimated
1. Field of the Invention
The invention relates to a flexible circuit substrate, more particularly to a flexible circuit substrate having an improved peel strength.
2. Description of the Related Art
Other features and advantages of the present invention will become apparent in the following detailed description of the preferred embodiments with reference to the accompanying drawings, of which:
FIG. 1 is a sectional view of a conventional flexible circuit substrate;
FIG. 2 is a sectional view of the first preferred embodiment of the flexible circuit substrate according to this invention;
Referring to FIG. 2, the first preferred embodiment of the flexible circuit substrate according to this invention is shown to include a polyimide film 21, a chromium layer 22 sputtered on the polyimide film 21, a nickel-chromium alloy layer 23 sputtered on the chromium layer 22, a first copper layer 24 sputtered on the nickel-chromium alloy layer 23, and a second copper layer 25 plated on the first copper layer 24.
Referring to FIG. 3 and Table 1, the process for manufacturing the first preferred embodiment of FIG. 2 includes the following steps:
(1) The chromium layer 22 is sputtered on the polyimide film 21. The polyimide film 21 is a square film that is 10 cm×10 cm in size. The chromium material for the sputtering step is a square material that is 20 cm×20 cm in size. The sputtering is performed for 1 minute in an argon atmosphere. The electric current applied during the sputtering step is 1.0 A. The pressure of the sputtering gas is 5×10−3 torr. The flow of the sputtering gas is 2×10−3 torr. The distance between the polyimide film 21 and the chromium material for the sputtering step is 20 cm. The thus-formed chromium layer 22 has a thickness smaller than 1 μm.