Loading patent…
OwnerHitoshi Morisaki, Yasushi Kamiya +4inventors
InventorsHitoshi Morisaki, Yasushi Kamiya, Shuji Nomura, Masahiro Totuka, Tomoki Oku, Ryo Hattori
Estimating the term…
The present invention is to provide a silicon nitride film forming apparatus and a forming method which makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming apparatus and forming method in which a heating element and a substrate are arranged in a vacuum vessel connected to a gas exhaust system and a gas supply system to deposit a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system, comprises: an inner wall which is arranged in the vacuum vessel surrounding the heating element and the substrate so as to form a film formation space, a gas introduction means to introduce the raw material gas to the film forming space, and at least one of a heating means and a cooling means of the inner wall arranged to control the inner wall to a predetermined temperature.
A silicon nitride film forming apparatus in which a heating element and a substrate are arranged in a vacuum vessel connected to a gas exhaust system and a gas supply system to deposit a silicon nitride film on said substrate surface by maintaining said heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from said gas supply system, comprising:
A silicon nitride film forming method in which a heating element and a substrate are arranged in a vacuum vessel connected to a gas exhaust system and a gas supply system to deposit a silicon nitride film on said substrate surface by maintaining said heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from said gas supply system,
Dependencies are inferred from the claim text.