Methods of fabricating an mram device using chemical mechanical polishing
AssigneeMicron Technology, Inc.
InventorsDonald L. Yates, Garry A. Mercaldi
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Abstract
The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. Then, a first dielectric layer is deposited over the first conductor and insulating layer to a thickness at least greater than the thickness of a desired MRAM cell. The first dielectric layer is then patterned and etched to form an opening over the first conductor for the cell shapes. Then, the magnetic layers comprising the MRAM cell are consecutively formed within the cell shapes and the first dielectric layer.
Claims28
A method of fabricating a memory cell, said method comprising the steps of:
- forming a conductive layer in a trench of an insulating layer;
- forming a first dielectric layer having a top surface over said conductive layer and said insulating layer;
- forming an opening in said first dielectric layer over said conductive layer;
- forming a first magnetic layer within said opening and over said first dielectric layer;
- forming a nonmagnetic layer over said first magnetic layer;
- forming a second magnetic layer over said nonmagnetic layer;
- forming a second dielectric layer over said second magnetic layer;
- and
- planarizing said first magnetic layer, nonmagnetic layer, second magnetic layer, and said second dielectric layer down to said top surface to form said memory cell.
A method of fabricating a memory cell, said method comprising the steps of:
- forming a conductive layer in a first insulating layer;
- forming a second insulating layer over said conductive layer and said first insulating layer;
- forming an opening in said second insulating layer over said conductive layer;
- forming a pinned layer within said opening;
- forming a nonmagnetic layer within said opening and over said pinned layer;
- and
- forming a sense layer within said opening and over said nonmagnetic layer.
Dependencies are inferred from the claim text.