Electro-static discharge protection device for integrated circuit inputs
AssigneeWinbond Electronics Corp.
InventorJiunn-Way Miaw
Life of this patent
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Abstract
An ESD (Electro-Static Discharge) protection device is for an integrated circuit, such high voltage device having an input pad. The ESD protection device comprises a pull-up means, such as a MOS transistor, connected between a supply potential and a ground potential of the integrated circuit for PD and ND ESD modes. A first-level protection means, such as a field oxide device, has an input terminal coupled to the input pad and an output terminal coupled to the ground potential. The output terminal of the first-level protection means is shared with the pull-up means for saving layout area. The first-level protection means provides passing an ESD current from the input pad into the pull-up means with the ground potential is floating.
Claims20
An ESD (Electro-Static Discharge) protection device for an integrated circuit having an input pad, said ESD protection device comprising:
- a pull-up means connected between a supply potential and a ground potential of said integrated circuit;
- and
- a first-level protection means having an input terminal coupled to said input pad and an output terminal coupled to said ground potential, wherein said output terminal of said first-level protection is shared with said pull-up means, said first-level protection means for passing an ESD current from said input pad into said pull-up means when said ground potential is floating.
An ESD (Electro-Static Discharge) protection device for an integrated circuit provided in a substrate having an input pad, said ESD protection device comprising:
- a field oxide device having an input terminal coupled to said input pad and an output terminal coupled to a ground potential of said integrated circuit;
- and
- a first semiconductor device having a first terminal connected to a supply potential and a second terminal in said substrate shared with said output terminal of said field oxide device, whereby an ESD current from said pad passes through said first semiconductor device via said field oxide device when said ground potential is floating.
An FOD (Field Oxide Device) type ESD (Electro-Static Discharge) protection device for an integrated circuit provided in a substrate having an input pad, said FOD type ESD protection device comprising:
- a field oxide region having a plurality of isolation devices on said substrate;
- a first gate region on said substrate and coupled to a ground potential of said integrated circuit;
- a first field region between said field oxide region and said gate region in said substrate, said first field region coupled to said ground
- a second field region beside said field oxide region in said substrate, said second field region coupled to said input pad;
- and
- a third field region beside said gate region in said substrate, said third field region coupled to a supply potential.
Dependencies are inferred from the claim text.