Damascene resistor and method for measuring the width of same

A method of fabricating a linewidth measurement structure for determining linewidths of damascened metal lines formed in an insulator comprising:

• forming a trench in the insulator;
• filling the trench with polysilicon;
• planarizing said polysilicon to form a polysilicon line;
• and
• ion implanting a dopant species and annealing to form within said polysilicon line a doped region having a predetermined resistivity.

A method of characterizing the photolithographic process for forming a damascened metal line in an insulating layer of a semiconductor device comprising:

• forming a trench in the insulating layer using the photolithographic process for forming damascened metal lines;
• filling and planarizing said trench with polysilicon to form a polysilicon line;
• forming a doped region in said polysilicon region, said doped region having a predetermined resistivity greater than a resistivity of the material of the damascened metal line;
• and
• measuring the effective width of said trench by measuring the resistance of said polysilicon line.

A resistor, comprising:

• a damascened polysilicon line formed in a first insulator, said polysilicon line having a first region having a first dopant concentration and a second region having a second dopant concentration, said first dopant concentration being greater than said second dopant concentration;
• a second insulator formed on a top surface of said first insulator;
• a first via formed in said second insulator, said first via electrically contacting said first region at a first end of said polysilicon line;
• and
• a second via formed in said second insulator, said second via electrically contacting said first region at a second end of said polysilicon line.

A method of fabricating a resistor, comprising:

• forming a damascened polysilicon line in a first insulator, said polysilicon line having a first region having a first dopant concentration and a second region having a second dopant concentration, said first dopant concentration being greater than said second dopant concentration;
• forming a second insulator a top surface of said first insulator;
• forming a first via formed in said second insulator, said first via electrically contacting said first region at a first end of said polysilicon line;
• and
• forming a second via formed in said second insulator, said second via electrically contacting said first region at a second end of said polysilicon line.