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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToshie Kutsunai, Shinichiro Hayashi, Takumi Mikawa, Yuji Judai
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An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.