Thin-film semiconductor epitaxial substrate and process for production thereof
AssigneeSumitomo Chemical Company, Limited
InventorsYuichi Hiroyama, Tomoyuki Takada, Osamu Ichikawa
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Abstract
A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.
Claims6
A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.
A process for producing a thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, which process is characterized by comprising the step of adding boron (B) to at least a part of a layer portion comprising said sub-collector layer and said collector layer.
Dependencies are inferred from the claim text.