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US 2003/0194861 A1Published application
Reactive gaseous deposition precursor feed apparatus
AssigneeMicron Technology, Inc.
InventorsAllen P. Mardian, Gurtej S. Sandhu
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AssigneeMicron Technology, Inc.
InventorsAllen P. Mardian, Gurtej S. Sandhu
Estimating the term…
The invention includes reactive gaseous deposition precursor feed apparatus and chemical vapor deposition methods. In one implementation, a reactive gaseous deposition precursor feed apparatus includes a gas passageway having an inlet and an outlet. A variable volume accumulator reservoir is joined in fluid communication with the gas passageway. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a deposition chamber. A first deposition precursor is fed to an inlet of a variable volume accumulator reservoir. With the first deposition precursor therein, volume of the variable volume accumulator reservoir is decreased effective to expel first deposition precursor therefrom into the chamber under conditions effective to deposit a layer on the substrate.
A reactive gaseous deposition precursor feed apparatus, comprising:
A reactive gaseous deposition precursor feed apparatus, comprising:
A reactive gaseous deposition precursor feed apparatus, comprising:
A reactive gaseous deposition precursor feed apparatus, comprising:
A chemical vapor deposition method comprising:
An atomic layer deposition method comprising:
A chemical vapor deposition method comprising:
A chemical vapor deposition method comprising:
Dependencies are inferred from the claim text.
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Apparatus for manufacture or treatment: apparatus for fluid treatment
Characterised by the method of coating: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in…
Characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber: pulsed pressure or…
Generic processes or apparatus for the manufacture or treatment of devices covered
Term end not estimated
This invention relates to reactive gaseous deposition precursor feed apparatus, and to chemical vapor deposition methods.
Semiconductor processing in the fabrication of integrated circuitry typically includes the deposition of layers on semiconductor substrates. Exemplary processes include physical vapor deposition (PVD) and chemical vapor deposition (CVD). In the context of this document, “CVD” includes any process, whether existing or yet-to-be developed, where one or more vaporized chemicals is fed as a deposition precursor for reaction and adherence to a substrate surface. By way of example only, one such CVD process includes atomic layer deposition (ALD). With typical ALD, successive mono-atomic layers are adsorbed to a substrate and/or reacted with the outer layer on the substrate, typically by successive feeding of different precursors to the substrate surface.
Chemical vapor depositions can be conducted within chambers or reactors which retain a single substrate upon a wafer holder or susceptor. One or more precursor gasses are typically provided to a shower head within the chamber which is intended to uniformly provide the reactant gasses substantially homogeneously over the outer surface of the substrate. The precursors react or otherwise manifest in a deposition of a suitable layer atop the substrate. Plasma enhancement may or may not be utilized, and either directly within the chamber or remotely therefrom.
Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
FIG. 1 is a diagrammatic depiction of a reactive gaseous deposition precursor feed apparatus in accordance with an aspect of the invention.
FIG. 2 is a diagrammatic depiction of another reactive gaseous deposition precursor feed apparatus in accordance with an aspect of the invention.
This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).
Referring to FIG. 1, an exemplary preferred embodiment reactive gaseous deposition precursor feed apparatus is indicated generally with reference 10. Such comprises a gas passageway 12 having an inlet 14 and an outlet 16. More inlets and outlets could be utilized, of course, with inlet 14 being configured for connection with a vaporized deposition precursor source, and outlet 16 being configured for connection with a deposition chamber. A variable volume accumulator reservoir 20 is joined in fluid communication with gas passageway 12. In the FIG. 1 preferred embodiment, an in-feed valve 22 is received in gas passageway 12 downstream of inlet 14, and an out-feed valve 24 is included in gas passageway 12 upstream of outlet 16. Variable volume accumulator reservoir 20 is joined in fluid communication with gas passageway 12 between in-feed valve 22 and out-feed valve 24.
Apparatus 10 includes a volume controlling moveable piston 26 received within variable volume accumulator reservoir 20. Such is diagrammatically depicted as having an actuator arm or shaft 28 extending therefrom. A spring 30 is shown received thereabout in engagement with piston 26 and an upper wall of accumulator reservoir 20 for spring biasing the piston towards a lowest volume state, which would be downwardly in the FIG. 1 depiction. Piston 26 might be pneumatically actuated, electric motor actuated, hydraulically actuated, or otherwise actuated with or without a spring bias. In the depicted embodiment, variable volume accumulator reservoir 20 is elongated in a direction generally transverse gas passageway 12 where the gas passageway joins with variable volume accumulator reservoir 20.