Non-volatile memory capable of preventing antenna effect and fabrication thereof

#This application claims the priority benefit of Taiwan application serial no. 91107421, filed Apr. 12, 2002.

#1. Field of Invention

#The present invention relates to a structure of a semiconductor device and the fabrication thereof. More particularly, the present invention relates to a structure of a non-volatile memory capable of preventing the antenna effect and the fabrication thereof.

#The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings,

#FIG. 1 illustrates a top view of a non-volatile memory structure capable of preventing the antenna effect according to a first embodiment of this invention;

#FIG. 2 illustrates a cross-sectional view of the non-volatile memory structure shown in FIG. 1 along the line II-II;

#First Embodiment

#Refer to FIG. 1, FIG. 1 illustrates a top view of a non-volatile memory structure capable of preventing the antenna effect according to the first embodiment of this invention.

#As that shown in FIG. 1, a word-line 102 having a high resistance portion 104 and a memory cell portion 106 is located on a substrate 100. The high resistance portion 104 of the word-line 102 is narrower than the memory cell portion 106 in order to have a higher resistance and is electrically connected with a grounding doped region 108 formed in the substrate 100 via a contact 112. The memory cell portion 106 of the word-line 102 is electrically connected with a metal interconnect 110 via a contact 114.