Method for manufacturing a dynamic quantity detection device

#This application is based on and incorporates herein by reference Japanese Patent Application No. 2002-107856 filed on Apr. 10, 2002.

#The present invention relates to a method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer.

#The publication JP-A-2000-241273 discloses such a method in the manufacturing process of a discrete pressure detection device 100 shown in FIGS. 3A and 3B.

#The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description made with reference to the accompanying drawings. In the drawings:

#FIG. 1A is a plan view of a pressure detection device manufactured with a method according to an embodiment of the present invention;

#FIG. 1B is a cross-sectional view of the device of FIG. 1A taken along the line IB-IB in FIG. 1A.

#The present invention will be described in detail with reference to an embodiment. As shown in FIGS. 1A and 1B, a dynamic quantity detection device according to an embodiment is an intelligent pressure detection device 1. The pressure detection device 1 of FIGS. 1A and 1B is used, for example, for controlling the fuel injection pressure in an engine or the brake pressure for the wheels of a vehicle.

#As shown in FIGS. 1A and 1B, the device 1 includes a metal stem 20 (stand), an intelligent semiconductor chip 3, and a glass layer 40. The metal stem 20 includes a disk-like diaphragm 10. The chip 3 is bonded to the diaphragm 10 using the glass layer 40. The chip 3 is in contact with the glass layer 40 at a first surface 31 of the chip 3. The diaphragm 10 is in contact with the glass layer 40 at a first surface 11 of the diaphragm 10. The chip 3 includes four rectangular gauges (detection elements) 51, 52, 53, 54, or four piezo resistors 51, 52, 53, 54, and processing circuit elements.

#Although not shown in the figure, the gauges 51, 52, 53, 54 are electrically interconnected by wiring lines to form a bridge circuit. The processing circuit elements are used for making up a circuit for processing an electric quantity such as current or potential outputted from the bridge circuit. As shown in FIGS. 1A and 1B, the gauges 51, 52, 53, 54 are located in a second surface 32 of the chip 3, which is opposite to the first surface 31, above the diaphragm 10. The processing circuit elements are included in a processing circuit area 70, which is located in the second surface 32 of the chip 3.