Semiconductor substrate deposition processor chamber liner apparatus

A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising:

• engaging a piece of a deposition chamber liner with a semiconductor substrate holder within a deposition chamber;
• moving the engaged chamber liner piece with the semiconductor substrate holder to proximate a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing;
• removing the chamber liner piece from the deposition chamber by passing it through the passageway;
• and
• providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway through which semiconductor substrates pass into and out of the chamber for deposition processing.

A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising:

• engaging a piece of a deposition chamber liner with an arm extending through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing;
• moving the engaged chamber liner piece with the arm to proximate said passageway;
• removing the chamber liner piece from the deposition chamber with the arm by passing the chamber liner piece through the passageway;
• and
• providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway with the arm.

A method of depositing materials over a plurality of semiconductor substrates, comprising:

• providing a subatmospheric deposition chamber in communication with a subatmospheric transfer chamber;
• processing a first plurality of semiconductor substrates within the subatmospheric deposition chamber effective to deposit one or more materials over said first plurality, said first plurality of substrates passing from the subatmospheric transfer chamber to the subatmospheric deposition chamber and then from the subatmospheric deposition chamber to the subatmospheric transfer chamber through a substrate passageway therebetween;
• after processing the first plurality of substrates, removing at least a piece of a chamber liner received within the subatmospheric deposition chamber by passing it through the substrate passageway into the transfer chamber;
• providing a replacement for the removed deposition chamber liner piece into the subatmospheric deposition chamber by passing the replacement from the subatmospheric transfer chamber through the substrate passageway into the subatmospheric deposition chamber;
• and
• processing a second plurality of semiconductor substrates within the subatmospheric deposition chamber effective to deposit said one or more materials over said second plurality;
• all of said first plurality processing, said removing, said providing a replacement and said second plurality processing occurring without exposing either the transfer chamber or the deposition chamber to room atmospheric pressure.