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US 2003/0194614 A1Published application
Method of forming a phase shift mask
AssigneeNone recorded
InventorHsin-Di Lin
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AssigneeNone recorded
InventorHsin-Di Lin
Estimating the term…
A method of forming a phase shift mask is disclosed. After providing a substrate with a shifter layer and a Cr layer, a first photoresist layer is formed on the Cr layer. Thereafter, a position of a shifter pattern is defined by using E-beam writing process and then a develop process is performed. After that, a first Cr pattern is formed by using an etching process to etch the Cr layer. After removing the first photoresist layer, the shifter pattern is formed by using an etching process to etch the shifter layer. After forming a second photoresist layer, an exposure process of conventional photolithography is performed by means of a boarder mask to define a position of a second Cr pattern. After performing a develop process, the second Cr pattern is formed by using an etching process to etch the first Cr pattern.
A method of forming a phase shift mask, comprising:
A method of forming a phase shift mask, comprising:
Dependencies are inferred from the claim text.
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Phase shift masks [PSM]; PSM blanks; Preparation thereof: attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift…
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…
With visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing;…
Photomechanical production of textured or patterned surfaces
Term end not estimated
1. Field of the Invention
The present invention relates to a method of forming a phase shift mask and, more particularly, to a high-throughput and low-cost method of fabricating a phase shift mask.
2. Discussion of the Background
FIG. 1A to FIG. 1K schematically illustrate cross-sectional diagrams of the conventional fabrication process of a phase shift mask.
FIG. 2A to FIG. 2K schematically illustrate cross-sectional diagrams of the fabrication process of a phase shift mask according to the present invention.
The present invention relates to a method of forming a phase shift mask and, more particularly, to a high-throughput and low-cost method of fabricating a phase shift mask.
Please refer to FIG. 2A to FIG. 2K, which schematically illustrate cross-sectional diagrams of the fabrication processes of a phase shift mask according to the present invention.
A quartz substrate 10 with a shifter layer 12 and a Cr layer 14 is first provided. The shifter layer12 is provided on the quartz substrate10, and the Cr layer 14 is provided on the shifter layer 12. After that, a first photoresist layer 16 is formed on the Cr layer 14, as shown in FIG. 2A.