Methods used in fabricating gates in integrated circuit device structures
AssigneeApplied Materials, Inc.
InventorsHuong Thanh Nguyen, Michael Barnes
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Abstract
One embodiment of the present invention is a method used to fabricate devices on a substrate, which method is utilized at a stage of processing wherein a dummy gate that includes gate electrode material and gate dielectric material is exposed, which method includes steps of: (a) flowing one or more gases into a plasma generator disposed outside a processing chamber containing the substrate; and (b) flowing output from the plasma generator into the processing chamber so that the substrate is exposed to species that selectively etch the gate electrode material.
Claims21
A method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a dummy gate that includes gate electrode material and gate dielectric material is exposed, which method comprises steps of:
- flowing one or more gases into a plasma generator disposed outside a processing chamber containing the substrate;
- and
- flowing output from the plasma generator into the processing chamber so that the substrate is exposed to species that selectively etch the gate electrode material.
Dependencies are inferred from the claim text.