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US 2003/0194496 A1Published application
Methods for depositing dielectric material
AssigneeApplied Materials, Inc.
InventorsPing Xu, Li-Qun Xia, Huong Thanh Nguyen, Louis Yang
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AssigneeApplied Materials, Inc.
InventorsPing Xu, Li-Qun Xia, Huong Thanh Nguyen, Louis Yang
Estimating the term…
Methods are provided for depositing a low dielectric constant material. In one aspects, a method is provided for depositing a low dielectric constant material including introducing a processing gas comprising hydrogen and an oxygen-containing organosilicon compound, an oxygen-free organosilicon compound, or combinations thereof, to a substrate surface in a processing chamber and reacting the processing gas at processing conditions to deposit the low dielectric constant material on the substrate surface, wherein the low k dielectric material comprises at least silicon and carbon. The processing gas may further include an inert gas, a meta-stable compound, or combinations thereof. The method may further include treating the low dielectric constant material with a hydrogen containing plasma, annealing the deposited low dielectric constant material, or combinations thereof.
A method for depositing a low dielectric constant material, comprising:
A method for processing a substrate, comprising:
Dependencies are inferred from the claim text.
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Characterised by the deposition of inorganic material, other than metallic material: deposition of compounds, mixtures or solid solutions, e.g.…
Carbides: silicon carbide
Coating metallic material
Term end not estimated
1. Field of the Invention
The invention relates to the fabrication of integrated circuits and to a process for depositing dielectric layers on a substrate.
2. Description of the Related Art
Silicon Carbide Layer:
A silicon carbide layer was deposited on a 200 mm substrate by supplying trimethylsilane to a processing chamber at a flow rate of about 150 sccm, supplying hydrogen gas at a flow rate of about 100 sccm, supplying helium at a flow rate of about 400 sccm, maintaining a substrate temperature of about 350° C., maintaining a chamber pressure of about 8.7 Torr, a spacing between the gas distributor and the substrate surface of about 515 mils, and a RF power of about 460 watts at a frequency of about 13.56 MHz. The process is performed for between about 70 seconds and about 80 seconds. The deposited silicon carbide material was observed to have a dielectric constant of about 4.24.
A silicon carbide layer deposited with the same process but without having hydrogen gas deposited silicon carbide material having a dielectric constant of about 4.35. Further silicon carbide deposition having hydrogen flow rates of 200 sccm, 400 sccm, and 600 sccm, produced silicon carbide material having dielectric constants of 4.32, 4.54, and 4.71, respectively.