Photomask for measuring lens aberration, method of manufacturing the same, and method of measuring lens aberration
AssigneeSamsung Electronics Co., Ltd.
InventorHo-Chul Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorHo-Chul Kim
Estimating the term…
A photomask is useful in measuring the aberration of an optical lens. The photomask includes a transparent substrate, a first opaque pattern formed on a first surface of the transparent substrate and defining a plurality of apertures that expose the first surface, and a second opaque pattern formed on the second surface of the transparent substrate. The photomask is placed in an exposure apparatus between a light source of the exposure apparatus and an optical lens whose aberration is to be measured. A photoresist layer on a wafer is exposed through the photomask and the pupil of the optical lens to form a first pattern on the wafer corresponding to the second opaque pattern of the photomask. The aberration of the pupil of the optical lens is evaluated based on the relative location at which the first pattern is formed on the wafer. Because the optical aperture is formed on the photomask along with the pattern whose image is to be transferred to the photoresist layer, the alignment between the optical aperture and the photomask pattern is assured.
A photomask for use in measuring the aberration of an optical lens, the photomask comprising:
In combination with an exposure apparatus having a light source, and an optical lens, a photomask for use in measuring the aberration of the optical lens, said photomask comprising:
A method of manufacturing a photomask for measuring the aberration of an optical lens, said method comprising:
A method of measuring the aberration of an optical lens, said method comprising:
Dependencies are inferred from the claim text.
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Testing optical components: aberration measurement
Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof: testing or measuring features, e.g.…
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…
Photomechanical production of textured or patterned surfaces
Term end not estimated
1. Field of the Invention
The present invention relates to a photomask, to a method of manufacturing the same, and to a method of using the photomask to measure the aberration of an image produced by a lens. In particular, the present invention relates to a method of measuring the aberration produced by a lens of an exposure apparatus used in the manufacturing of semiconductor devices or the like.
2. Description of the Related Art
The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments thereof made with reference to the attached drawings, of which:
FIGS. 1 through 3 illustrating a method of manufacturing a photomask for measuring lens aberration according to the present invention;
FIG. 4 is a plan view of a photomask for measuring lens aberration according to the present invention;
The preferred embodiments of the present invention now will be described more fully with reference to the accompanying drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Also, when a layer is referred to as being “on” another layer or substrate, such a description refers to the fact the layer in question can be disposed directly on the other layer or substrate, or intervening layers may be present therebetween.
FIGS. 1-3 illustrate the manufacturing of a photomask 100 according to the present invention. Referring now to FIG. 1, reference numeral 10 designates a transparent substrate of the photomask 100. The substrate 10 is made of quartz. A first opaque layer 22 and a second opaque layer 24 are respectively formed on a first surface 12 of the transparent substrate 10 and a second surface 14, which is opposite to the first surface 12. Preferably, the first and second opaque layers 22 and 24 are formed of chromium.
Referring to FIG. 2, the first opaque layer 22 is patterned to form a first opaque pattern 22a having a plurality of apertures 23 exposing the first surface 12 of the transparent substrate 10. FIG. 4 is a plan view of the photomask 100 according to the present invention. The apertures 23 defined by the first opaque pattern 22a each have a diameter Da of about 10 to 30 μm. Preferably, the apertures 23 each have a diameter Da of about 20 μm.