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US 2003/0193075 A1Published application
Fuse structure
AssigneeNanya Technology Corporation
InventorsJui-Lin Hung, Mang-Shiang Wang
Life of this patent
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AssigneeNanya Technology Corporation
InventorsJui-Lin Hung, Mang-Shiang Wang
Estimating the term…
A novel fuse structure. An optimal position of laser spot is defined above a substrate. A first conductive layer is formed on part of the substrate. A dielectric layer is formed on the substrate and the first conductive layer. A second conductive layer comprising the position of laser spot is formed on part of the dielectric layer. A third conductive layer is formed on the part of the dielectric layer placed above the first conductive layer, wherein the third conductive layer is insulated from the first and second conductive layers. At least one conductive plug penetrates the dielectric layer, to electrically connect the first conductive layer and the second conductive layer. Thus, the third conductive layer serves as a floating layer to prevent the first conductive layer from being damaged in the laser blow process.
A fuse structure, comprising:
A fuse window having a plurality of fuse structures, each of the fuse structures comprising:
A fuse structure, comprising:
A fuse window having a plurality of fuse structures, Each fuse structure comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
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Fuses, i.e. interconnections changeable from conductive to non-conductive: changeable by the use of an external beam, e.g. laser beam or ion beam
Generic packages, interconnections, connectors or other constructional details of devices covered by
Term end not estimated
1. Field of the Invention
The present invention relates to a fuse structure used in an integrated circuit device, and more particularly, to a novel fuse structure that can prevent the adjoining fuse structure from being damaged in the laser blow process.
2. Description of the Related Art
The present invention can be more fully understood by reading the subsequent detailed description in conjunction with the examples and references made of the accompanying drawings, wherein:
FIG. 1 is a sectional view of the fuse structure of the prior art;
FIG. 2 is a top view of the fuse structure of the prior art, and FIG. 1 shows the cross section C-C′ of FIG. 2;
The First Embodiment A fuse structure of the first embodiment is shown with reference to FIGS. 3˜4. FIG. 3 is a sectional view of the fuse structure in the first embodiment of the present invention. FIG. 4 is a top view of the fuse structure in the first embodiment of the present invention, and FIG. 3 shows the cross section D-D′ of FIG. 4.
Referring to FIG. 3, an optimal position of laser spot 310 is defined above an isolation substrate 300. A first conductive layer 320 is formed on the partial surface of the substrate 300. Then, a dielectric layer 330 is formed on the substrate 300 and the first conductive layer 320. The material of the substrate 300 may be SiO2. The material of the first conductive layer 320 may be tungsten (W). The material of the dielectric layer 330 may be SiO2.
In FIG. 3, a second conductive layer 340 comprising the position of laser spot 310 is formed on part of the dielectric layer 330. The material of the second conductive layer 340 may be Al, AlCu alloy or poly-silicon.