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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMakio Horikawa, Kiyoshi Ishibashi, Mika Okumura
Estimating the term…
A main object of the present invention is to provide a manufacturing method of an electrode structure and a thin-film structural body, which can remove a sacrifice film without removing other insulating films. In order to achieve the above-mentioned object, an anchor hole (52) which provides an opening to the surface of a wiring (45) covered with a sacrifice film (51) and a nitride film (47). The anchor hole (52) is constituted by a hole section (47c) formed in the nitride film (47) and an opening (51a) of the sacrifice film (51). The hole section (47c) is opened in a manner so as to enter the wiring (45) inward from an edge (45a) of the surface of the wiring (45) by a first predetermined distance (d1). The opening (51a) is opened in a manner so as to retreat from the hole section (47c) by a second predetermined distance (d2). The existence of the first and second predetermined distances (d1, d2) makes it possible to lengthen the entering distance to the oxide film (33) of etchant to be used for removing the sacrifice film (51).
An electrode structure comprising:
An electrode structure comprising:
A manufacturing method of a thin-film structural body, comprising the steps of:
Dependencies are inferred from the claim text.
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Without movable or flexible elements: interconnects
Static structures: anchors
Sacrificial layer: sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
Processes or apparatus specially adapted for the manufacture or treatment of microstructural
Term end not estimated
The present invention relates to an electrode structure that is formed by using a semiconductor processing technique and a manufacturing method of a thin-film structural body.
FIG. 17 is a cross-sectional view showing a conventional electrode structure, which shows a thin-film structural body 101 installed in the electrode structure. The thin-film structural body 101 includes a supporting portion 103 and a floating portion 105 supported by the supporting portion 103, and is formed above a substrate 107 by using a conductive material. The floating portion 105, which is placed with a predetermined distance from the substrate 107, extends outwards from an upper portion of the supporting portion 103.
The substrate 107 includes a substrate main body 111, a first insulating film 113, a wiring 115 and a second insulating film 117. The first insulating film 113 is formed on the substrate main body 111. The wiring 115 is provided on the surface of the first insulating film 113, and the surface of the first insulating film 113 and the surface of the wiring 115 are substantially flattened without a step portion. The second insulating film 117 covers the surfaces of the wiring 115 and the first insulating film 113 and side faces thereof. Here, the second insulating film 117 has a hole section 117a which opens on the surface of the wiring 115 so that the surface of the wiring 115 is selectively exposed. The supporting portion 103 is formed on the wiring 115 through the hole section 117a.
FIG. 1 is a plan view showing a configuration of a main part of a semiconductor acceleration sensor to which an electrode structure and a manufacturing method of a thin-film structural body according to the present invention can be applied;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIGS. 3 to 9 are cross-sectional views showing manufacturing processes of the structure shown in FIG. 2;
A. Embodiment 1
FIG. 1 is a plan view showing a configuration of a main part of a semiconductor acceleration sensor 100 to which a manufacturing method of a thin-film structural body according to the present invention can be applied. Moreover, FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. The semiconductor acceleration sensor 100 includes a substrate 1 serving as a sensor substrate, and a sensor part 3 which is formed above the substrate 1 (on the front side of the paper face of FIG. 1) and has a function of detecting acceleration.
The sensor part 3, which includes a movable mass body 21, a plurality of fixed structures 23 and a plurality of beams 25, is formed as a thin-film structural body. The thin-film structural body is formed by using a conductive material, that is, for example, doped polysilicon made by silicon doped with impurities such as phosphorous.