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US 2003/0190807 A1Published application
Method for manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorsEiichi Soda, Ken Tokashiki, Atsushi Nishizawa
Life of this patent
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Abstract
A film containing low dielectric constant MSQ is used for an interlayer insulation film, an opening is provided in the MSQ by use of a resist as a mask, and resist is ashed while the MSQ is exposed. Ashing conditions in this case are set to a low temperature (−20° C. to 60° C.) and lower pressure (5 to 200 mTorr), and RF supply is carried out in the order of bias power and source power. Thus, a CH3 group which determines a low dielectric constant characteristic of the MSQ can be left in the film.
Claims6
A method for manufacturing a semiconductor device, comprising the steps of:
- forming at least one interlayer insulation film on a substrate;
- forming a mask pattern made of a photoresist on the at least one interlayer insulation film;
- etching the at least one interlayer insulation film from a surface thereof by use of the mask pattern as a mask to expose a part of the at least one interlayer insulation film;
- and
- removing the mask pattern by ashing using plasma containing oxygen while a part of the at least one interlayer insulation film is exposed,
- wherein the ashing includes the steps of:
- applying source power to a wall of a chamber containing the substrate to generate plasma in the chamber containing the substrate;
- and applying bias power to a stage mounting the substrate to control incidence energy of ions in the plasma on the substrate, and the step of applying the bias power is carried out before the step of applying the source power.
5 more elements
Dependencies are inferred from the claim text.