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AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Won Lee, Si-Young Choi, Seong-Jun Heo, Sung-Man Kim, Min-Chul Sun, Ja-Hum Ku, Sun-Pil Youn
Estimating the term…
A method of manufacturing a semiconductor device having a metal conducting layer is provided. A metal conducting layer pattern having the metal conducting layer is formed on a semiconductor substrate. A portion of the metal conducting layer is partially exposed on the semiconductor substrate. The semiconductor substrate having the metal conducting layer pattern is loaded into a reaction chamber. A first silicon source gas is flowed into the reaction chamber. A silicon oxide layer is formed on the semiconductor substrate having the metal conducting layer pattern by supplying a second silicon source gas and an oxygen source gas into the reaction chamber.
A method of manufacturing a semiconductor device having a metal conducting layer, the method comprising the steps of:
A method of manufacturing a semiconductor device having a metal conducting layer, the method comprising the steps of:
Dependencies are inferred from the claim text.
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Manufacture or treatment: using multiple gate spacer layers, e.g. bilayered sidewall spacers
The conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon: the conductor further comprising a non-elemental silicon…
The conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures: the additional layers…
Inorganic electric semiconductor devices
Term end not estimated
1. Field of the Invention
The present invention relates to a semiconductor device having a metal conducting layer and, more particularly, to a semiconductor device having a metal conducting layer for preventing an exposed metal layer from being oxidized.
2. Description of the Related Art
The above and other objects and advantages of the present invention will become more apparent by describing in detail-preferred embodiments thereof with reference to the accompanying drawings in which:
FIG. 1 is a flow chart for describing a manufacturing method of a semiconductor device having a metal conducting layer according to an embodiment of the present invention;
FIGS. 2 to 5 are cross-sectional diagrams for describing a manufacturing method of a semiconductor device having a metal conducting layer according to an embodiment of the present invention;
Hereinafter, the present invention will be described in detail with reference to the accompany drawings. It should be noted that like reference numerals are used for designation of like or equivalent parts or portion for simplicity of illustration and explanation. Also, in the following description, specifications will be made to provide a thorough understanding about the present invention. It is apparent to one skilled in the art that the present invention can be achieved without the specifications. There will be omission of detailed description about well-known functions and structures to clarify key points of the present invention.
According to an embodiment of the present invention, a silicon oxide layer is formed on a silicon substrate having a metal gate line pattern by an atomic layer deposition (ALD) process. The ALD process is performed under about 100° C. for preventing a metal layer of the metal gate line pattern, such as tungsten, from being oxidized, thereby forming a vertical profile of the gate line pattern. However, as chloride (Cl2) in a silicon source and carbon (C) in pyridine (used as a catalyst) are included in the ALD process, the characteristics of a formed transistor may be deteriorated by those impurities such as chlorine and carbon. Thus, the present invention provides a method of forming dual spacers including a silicon oxide layer, which has a vertical profile and does not include impurities in the oxidized metal layer.
FIG. 1 is a flow chart for describing a manufacturing method of a semiconductor device having a metal conducting layer according to an embodiment of the present invention, and FIGS. 2 to 5 are cross-sectional diagrams for describing a manufacturing method of a semiconductor device having a metal conducting layer according to an embodiment of the present invention.