Loading patent…
AssigneeNone recorded
InventorsKAZUAKI OHMI, TAKAO YONEHARA, KIYOFUMI SAKAGUCHI
Estimating the term…
In order to constantly produce a uniform SOI substrate without defect at a low cost by preventing destruction of a porous layer prior to separation of bonded substrates and effecting separation of the bonded substrates securely and easily, in a process for producing a semiconductor substrate comprising forming a non-porous semiconductor layer on a first substrate having porous layers formed on a surface thereof, forming an insulating layer on a surface thereof, bonding the insulating layer to a second substrate, and separating the porous layers, thereby transferring the insulating layer and the non-porous semiconductor layer onto the surface of the second substrate, the first porous layer is formed with a low porosity while the second porous layer is made thin to such extent as to be fragile to easily separate the first and the second substrates.
A process for producing a semiconductor substrate comprising the steps of:
A composite member for a semiconductor substrate, comprising a first substrate, a porous region provided on the first substrate, a non-porous semiconductor layer provided on the porous region, and a second substrate provided on the non-porous semiconductor layer;
Dependencies are inferred from the claim text.
No related US applications are recorded in the indexed filing history.
Backward citations are indexed for grants only.
Drawings are temporarily unavailable. Open the PDF at USPTO
Preparing SOI wafers: using bonding
Generic processes or apparatus for the manufacture or treatment of devices covered
Term end not estimated
USPTO file history isn’t available for this patent, so only indexed dates are shown.
1. Field of the Invention
The present invention relates to a process for producing a semiconductor substrate, and more particularly a process for producing a semiconductor substrate provided with a plurality of porous layers.
2. Related Background Art
FIGS. 1A, 1B, 1C and 1D are schematic cross-sectional views showing a basic process for producing a semiconductor substrate of the present invention;
FIGS. 2A, 2B, 2C, 2D and 2E are schematic cross-sectional views showing an embodiment of the process for producing a semiconductor substrate of the present invention;
FIGS. 3A, 3B, 3C, 3D and 3E are schematic cross-sectional views showing another embodiment of the process for producing a semiconductor substrate of the present invention;
In the following there will be explained a basic process for producing a semiconductor substrate according to the present invention, with reference to FIGS. 1A to 1D.
At first, as shown in FIG. 1A, there is prepared a first substrate 10 provided with a porous region 1 and a non-porous semiconductor layer 13 provided on the porous region 1.
The porous layer 1 is so formed as to have a structure including at least a first porous layer 11 adjacent to the non-porous semiconductor layer 13 and a second porous layer 12.