Process for tungsten silicide atomic layer deposition

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) introducing a tungsten halide precursor, where the halide is not fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (c) introducing a silicon precursor selected from SinXmYkHl, where X and Y are halides and n,m,k,l are integers, into the reaction space to the halide terminated substrate surface to create a hydride terminated substrate surface;
• (d) repeating steps (b) and (c) an integral number of times to form a metal silicide film on the substrate, wherein a reaction by-product is a hydrogen halide.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) introducing a tungsten halide precursor, where the halide is not a fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (c) introducing silicon precursor selected from SinXmYkHl, where X and Y are halides, and n,m,k,l are integers, into the reaction space to the halide terminated substrate surface to create a hydride terminated substrate surface;
• (d) introducing atomic hydrogen into the reaction space to create a hydrogen terminated substrate;
• (d) repeating steps (b), (c) and (d) an integral number of times to form a metal silicide film on the substrate, wherein a reaction by-product is a hydrogen halide.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) introducing a tungsten halide, where the halide is not fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (c) introducing atomic hydrogen into the reaction space to the surface previously terminates with a halide
• (d) introducing a silicon chloride precursor into the reaction space to the surface previously terminated with a halide;
• and
• (e) repeating steps (c), (b), (c) and (d) an integral number of times to form a metal silicide film on the substrate, wherein a reaction by-product is a hydrogen halide.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) introducing a tungsten halide, where the halide is not fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (c) introducing atomic hydrogen into the reaction space to the surface previously terminated with a halide to create a hydrided surface;
• (d) introducing a silicon chloride precursor into the reaction space to the hydrogen terminated substrate surface to create a halide terminated substrate surface;
• (e) introducing atomic hydrogen into the reaction space to the surface previously terminated with a halide;
• and
• (f) repeating steps (b), (c,) (d), and (e) an integral number of times to form a metal silicide film on the substrate, wherein a reaction by-product is a hydrogen halide.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) introducing a first tungsten halide, where the halide is not fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (c) introducing atomic hydrogen into the reaction space to the surface previously terminated with a halide;
• (d) introducing a second tungsten halide, where the halide is not fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (e) repeating steps (c) and (d) an integral number of times
• (d) introducing a silicon hydride into the reaction space to the surface previously terminates with a halide;
• and
• (e) repeating steps (b), (c) and (d) an integral number of times.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) introducing a tungsten halide precursor, where the halide is not fluorine, into the reaction space to the hydrated substrate to create a halide terminated substrate surface;
• (c) introducing Si hydride into the reaction space to the surface previously terminated with a halide;
• (d) introducing Si halide into the reaction space to the surface previously terminates with a hydride;
• (e) repeating (c) and (d) an integral number of times
• (f) introducing Si hydride into the reaction space to the surface previously terminated with a halide;
• and
• (g) repeating steps (b) through (f) an integral of number of times.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) controllably depositing a metal silicide with an ALD process in a predetermined number of ALD cycles to form a metal layer on the hydrated substrate;
• (c) terminating the metal layer with a halide to form a surface halided metal layer;
• (d) controllably depositing a tungsten layer using WCl6 ALD chemistry with H reduction;
• (e) repeating steps (b) (c) and (d) an integral number of times to form a nanolaminate of silicide and metal layers on the hydrated substrate.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) controllably depositing a metal silicide with an ALD process in a predetermined number of ALD cycles to form a metal layer on the hydrated substrate;
• (c) terminating the metal layer with a halide to form a surface halided metal layer;
• (d) controllably depositing additional tungsten layers using WF6 ALD chemistry with silicon hydride reduction;
• and
• (e) repeating steps (b) (c) and (d) an integral number of times to form a nanolaminate of silicide and metal layers on the hydrated substrate.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) controllably depositing a metal halide with an ALD process in a predetermined number of ALD cycles to form a metal layer on the hydrated substrate;
• (c) introducing atomic hydrogen into the reaction space to the surface previously terminated with a halide to create a hydrided surface;
• (d) controllably depositing silicon halide;
• and
• (e) repeating steps (b) (c) and (d) an integral number of times to form a nanolaminate of silicide and metal layers on the hydrated substrate.

A method for growing a thin film on a substrate in a reaction space, comprising:

• (a) providing a hydrated substrate;
• (b) controllably depositing a metal halide with an ALD process in a predetermined number of ALD cycles to form a metal layer on the hydrated substrate;
• (c) introducing atomic hydrogen into the reaction space;
• (c) introducing a silicon halide into the reaction space;
• (d) introducing atomic hydrogen into the reaction space;
• and
• (e) repeating steps (b) (c). (d) and (e) an integral number of times to form a nanolaminate of silicide and metal layers on the hydrated substrate.