Multiple precursor cyclical deposition system

#1. Field of the Invention

#Embodiments of the present invention generally relate to an apparatus and method of deposition utilizing multiple precursors. More particularly, embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing multiple precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap.

#2. Description of the Related Art

#So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.

#It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

#FIG. 1 is a partial cross-sectional perspective view of one embodiment of a processing system adapted to perform cyclical deposition.

#Process Chamber Adapted for Cyclical Deposition

#FIGS. 1, 1A, and 2 are drawings of exemplary embodiments of a processing system that may be used to perform cyclical deposition. The term “cyclical deposition” as used herein refers to the sequential introduction of reactants to deposit a thin layer over a structure and includes processing techniques such as atomic layer deposition and rapid sequential chemical vapor deposition. The sequential introduction of reactants may be repeated to deposit a plurality of thin layers to form a layer to a desired thickness. Not wishing to be bound by theory, it is believed that the mode of deposition of cyclical deposition provides conformal coverage over substrate structures.

#FIG. 1 is a partial cross-sectional perspective view of one embodiment of a processing system 100. The processing system 100 comprises a lid assembly 120 includes a lid plate 122, a manifold block 150, one or more valves (one valve 155A is shown in FIG. 1), one or more reservoirs 170, and a distribution plate 130. The lid assembly 120 has one or more isolated zones/flow paths to deliver one or more process gases to a workpiece/substrate surface disposed in the processing system 100. The isolated zones/flow paths prevent exposure or contact of the precursor gases within the lid assembly. The term “process gas” is intended to include one or more reactive gas, precursor gas, purge gas, carrier gas, as wells as a mixture or mixtures thereof.