Low-impedance decoupling device
AssigneeNEC Corporation
InventorsTakashi Nakano, Hirokazu Tohya
Life of this patent
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Abstract
A decoupling device for decoupling a high-frequency noise wave in a digital circuit is formed as a line device including a portion of a semiconductor substrate, an insulator film formed thereon as a gate oxide film, and an interconnect line formed thereon as a gate electrode. The line capacitance between the interconnect line and the semiconductor substrate is 100 pF or above, whereby the decoupling device effectively decouples the electromagnetic noise wave generated by a switching device in a frequency range between 10 and 1000 GHz.
Claims33
A decoupling device formed in a semiconductor circuit, comprising:
- a semiconductor substrate;
- an insulator film formed on said semiconductor substrate;
- and
- an interconnect line formed on said insulator film, wherein:
- a line capacitance between said interconnect line and said semiconductor substrate is set at a value such that said decoupling device effectively decouples an electromagnetic noise wave generated in said semiconductor circuit.
A decoupling device formed in a semiconductor circuit, comprising:
- a first insulator film formed on a semiconductor substrate;
- a conductor layer formed on said insulator film;
- a second insulator film formed on said conductor layer;
- and
- an interconnect line formed on said second insulator film, wherein:
- at least one of interfaces between said conductor layer and said second insulator film and between said second insulator film and said interconnect line has a concave and convex surface;
- and
- a line capacitance between said interconnect line and said conductor layer is set at a value such that said decoupling device effectively decouples an electromagnetic noise wave generated in said semiconductor circuit.
A semiconductor circuit comprising:
- a semiconductor substrate;
- a high-frequency source overlying said semiconductor substrate;
- a power-source distribution line overlying said semiconductor substrate for supplying power to said high-frequency source;
- and
- a line device including a portion of said semiconductor substrate, an insulator film formed on said portion, and an interconnect line formed on said insulator film, said interconnect line being connected in series with said power-source distribution line to thereby form a part thereof, wherein:
- a line capacitance between said interconnect line and said semiconductor substrate is set at a value such that said line device effectively decouples an electromagnetic wave generated by said high-frequency source.
A semiconductor circuit comprising:
- a semiconductor substrate;
- a high-frequency source overlying said semiconductor substrate;
- a power-source distribution line overlying said semiconductor substrate for supplying power to said high-frequency source;
- and
- a line device including a conductor layer overlying said semiconductor substrate, an insulator film formed on said conductor layer, and an interconnect line formed on said insulator film, said interconnect line being connected in series with said power-source distribution line to thereby form a part thereof, wherein:
- a line capacitance between said interconnect line and said conductor layer is set at a value such that said line device effectively decouples an electromagnetic wave generated by said high-frequency source.
29 The semiconductor circuit according to claim 28, wherein at least one of interfaces between said conductor layer and said insulator film and between said insulator film and said interconnect line has a convex and concave surface thereon.
32 The semiconductor circuit according to claim 28, wherein said insulator film and said interconnect line are formed during the steps of forming said high-frequency source.
Dependencies are inferred from the claim text.